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Selection of the two enantiotropic polymorphs of diF-TES-ADT in solution sheared thin film transistors
13 November 2020
We report the effect of solution shearing speed on the performances of diF-TES-ADT-based OFETs. X-ray diffraction reveals that th low-temperature phase is predominant at low shearing speed, while, upon increasing the speed, the high-tempertature phase prevails. The effect of polymorph composition on the electrical performances is reported with the best mobilities found in a mixture of the two polymorphs.
We report the effect of solution shearing speed on the performances of diF-TES-ADT-based OFETs. X-ray diffraction reveals that th low-temperature phase is predominant at low shearing speed, while, upon increasing the speed, the high-tempertature phase prevails. The effect of polymorph composition on the electrical performances is reported with the best mobilities found in a mixture of the two polymorphs.
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Selection of the two enantiotropic polymorphs of diF-TES-ADT in solution sheared thin film transistors


Tommaso Salzillo, Nieves Montes, Raphael Pfattner and Marta Mas-Torrent *

J. Mater. Chem. C, 2020, Advance Article
https://doi.org/10.1039/D0TC03222K

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