Conductivity control via minimally invasive anti-Frenkel defects in a functional oxide

Autores: Donald M. Evans, Theodor S. Holstad, Aleksander B. Mosberg, Didrik R. Småbråten, Per Erik Vullum, Anup L. Dadlani, Konstantin Shapovalov, Zewu Yan, Edith Bourret, David Gao, Jaakko Akola, Jan Torgersen, Antonius T. J. van Helvoort, Sverre M. Selbach & Dennis Meier.
Publicación: Nat. Mater. (2020)
https://doi.org/10.1038/s41563-020-0765-x
Mentions: Conductivity control via minimally invasive anti-Frenkel defects in a functional oxide

Utilizing quantum effects in complex oxides, such as magnetism, multiferroicity and superconductivity, requires atomic-level control of the material’s structure and composition. In contrast, the continuous conductivity changes that enable artificial oxide-based synapses and multiconfigurational devices are driven by redox reactions and domain reconfigurations, which entail long-range ionic migration and changes in stoichiometry or structure.

Oxides for new-generation electronics

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Fatigue and retention in the growth window of ferroelectric Hf0.5Zr0.5O2 thin films

Título : Fatigue and retention in the growth window of ferroelectric Hf0.5Zr0.5O2 thin films
Autores: Jike Lyu, Ignasi Fina, and Florencio Sánchez. 
Appl. Phys. Lett. 117, 072901 (2020)
DOI: 10.1063/5.0017738
The growth window of epitaxial Hf0.5Zr0.5O2 is established taking into account the main ferroelectric properties that films have to present simultaneously: high remanent polarization, low fatigue, and long retention.

Oxides for new-generation electronics

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Visualization of moiré superlattices

Moiré superlattices in van der Waals heterostructures have given rise to a number of emergent electronic phenomena due to the interplay between atomic structure and electron correlations. Indeed, electrons in these structures have been recently found to exhibit a number of emergent properties that the individual layers themselves do not exhibit.

Oxides for new-generation electronics

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Siesta: Recent developments and applications

A review of the present status, recent enhancements, and applicability of the Siesta program is presented. Since its debut in the mid-1990s, Siesta’s flexibility, efficiency, and free distribution have given advanced materials simulation capabilities to many groups worldwide.

Oxides for new-generation electronics

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Flexible Antiferromagnetic FeRh Tapes as Memory Elements

Ignasi Fina*, Nico Dix, Enric Menéndez, Enric Menéndez, Anna Crespi, Michael Foerster, Lucia Aballe, Florencio Sánchez, Josep Fontcuberta*. ACS Appl. Mater. Interfaces 2020, XXXX, XXX, XXX-XXX. Publication Date:March 9, 2020

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