Oxides for new-generation electronics

Thermal evolution of ferroelectric behavior in epitaxial Hf0.5Zr0.5O2

Título : Thermal evolution of ferroelectric behavior in epitaxial Hf0.5Zr0.5O2
Autores: J. W. Adkins, I. Fina, F. Sánchez, S. R. Bakaul, and J. T. Abiade

Appl. Phys. Lett. 117, 142902 (2020)
DOI: https://doi.org/10.1063/5.0015547

PlumX: Thermal evolution of ferroelectric behavior in epitaxial Hf0.5Zr0.5O2
Herein, we report a cryogenic-temperature study on the evolution of the ferroelectric properties of epitaxial Hf0.5Zr0.5O2 thin films on silicon. Wake-up, endurance, and fatigue of these films are found to be intricately correlated, strongly hysteretic, and dependent on available thermal energy.


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Engineering Polar Oxynitrides: Hexagonal Perovskite BaWON2

Título : Engineering Polar Oxynitrides: Hexagonal Perovskite BaWON2
Autores: Dr. Judith Oró‐Solé, Dr. Ignasi Fina, Dr. Carlos Frontera, Dr. Jaume Gàzquez, Dr. Clemens Ritter, Marina Cunquero, Dr. Pablo Loza‐Alvarez, Dr. Sergio Conejeros, Prof. Pere Alemany, Prof. Enric Canadell, Prof. Josep Fontcuberta, Prof. Amparo Fuertes. 
Citation: Angew. Chem. Int. Ed. 2020, 59, 18395 – 18399.
DOI: https://doi.org/10.1002/ange.202006519
PlumX: Engineering Polar Oxynitrides: Hexagonal Perovskite BaWON2

Non‐centrosymmetric polar compounds have important technological properties. Reported perovskite oxynitrides show centrosymmetric structures, and for some of them high permittivities have been observed and ascribed to local dipoles induced by partial order of nitride and oxide.


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Mechanical Softness of Ferroelectric 180° Domain Walls

Autores: Christina Stefani, Louis Ponet, Konstantin Shapovalov, Peng Chen, Eric Langenberg, Darrell G. Schlom, Sergey Artyukhin, Massimiliano Stengel, Neus Domingo, and Gustau Catalan.
Citation: Phys. Rev. X 10, 041001 – Published 1 October 2020
PlumX: Mechanical Softness of Ferroelectric 180° Domain Walls

Using scanning probe microscopy, we measure the out-of-plane mechanical response of ferroelectric 180° domain walls and observe that, despite separating domains that are mechanically identical, the walls appear mechanically distinct—softer—compared to the domains.


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Discovery of highly polarizable semiconductors BaZrS3 and Ba3Zr2S7

Título : Discovery of highly polarizable semiconductors BaZr S3 and Ba3 Zr2 S7
Autores: Stephen Filippone, Boyang Zhao, Shanyuan Niu, Nathan Z. Koocher, Daniel Silevitch, Ignasi Fina, James M. Rondinelli, Jayakanth Ravichandran, and R. Jaramillo.
Citation: Phys. Rev. Materials 4, 091601(R) – Published 8 September 2020. 
DOI: https://doi.org/10.1103/PhysRevMaterials.4.091601
PlumX: Discovery of highly polarizable semiconductors BaZrS3 and Ba3Zr2S7

There are few known semiconductors exhibiting both strong optical response and large dielectric polarizability. Inorganic materials with large dielectric polarizability tend to be wide-band gap complex oxides. Semiconductors with a strong photoresponse to visible and infrared light tend to be weakly polarizable. Interesting exceptions to these trends are halide perovskites and phase-change chalcogenides.


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Magnetic droplet solitons

Autores: Ferran Macià, and Andrew D. Kent.
Citation: Journal of Applied Physics 
PlumX: Magnetic droplet solitons

Magnetic droplet solitons are dynamical magnetic textures that form due to an attractive interaction between spin waves in thin films with perpendicular magnetic anisotropy. Spin currents and the spin torques associated with these currents enable their formation as they provide a means to excite non-equilibrium spin-wave populations and compensate their decay.


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Epitaxial Ferroelectric La-doped Hf0.5Zr0.5O2 Thin Films

Título : Epitaxial Ferroelectric La-Doped Hf0.5Zr0.5O2 Thin Films
Autores: Tingfeng Song, Romain Bachelet, Guillaume Saint-Girons, Raul Solanas, Ignasi Fina, and Florencio Sanchez
Citation: ACS Appl. Electron. Mater. 2020
Publication DateSeptember 14, 2020
PlumX: Epitaxial Ferroelectric La-doped Hf0.5Zr0.5O2 Thin Films

Doping ferroelectric Hf0.5Zr0.5O2 with La is a promising route to improve endurance. However, the beneficial effect of La on the endurance of polycrystalline films may be accompanied by degradation of the retention. We have investigated the endurance - retention dilemma in La-doped epitaxial films.


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Conductivity control via minimally invasive anti-Frenkel defects in a functional oxide

Autores: Donald M. Evans, Theodor S. Holstad, Aleksander B. Mosberg, Didrik R. Småbråten, Per Erik Vullum, Anup L. Dadlani, Konstantin Shapovalov, Zewu Yan, Edith Bourret, David Gao, Jaakko Akola, Jan Torgersen, Antonius T. J. van Helvoort, Sverre M. Selbach & Dennis Meier.
Citation: Nat. Mater. (2020)
PlumX: Conductivity control via minimally invasive anti-Frenkel defects in a functional oxide

Utilizing quantum effects in complex oxides, such as magnetism, multiferroicity and superconductivity, requires atomic-level control of the material’s structure and composition. In contrast, the continuous conductivity changes that enable artificial oxide-based synapses and multiconfigurational devices are driven by redox reactions and domain reconfigurations, which entail long-range ionic migration and changes in stoichiometry or structure.


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On the Promotion of Catalytic Reactions by Surface Acoustic Waves

Surface acoustic waves (SAW) allow to manipulate surfaces with potential applications in catalysis, sensor and nanotechnology. SAWs were shown to cause a strong increase in catalytic activity and selectivity in many oxidation and decomposition reactions on metallic and oxidic catalysts.


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Fatigue and retention in the growth window of ferroelectric Hf0.5Zr0.5O2 thin films

Título : Fatigue and retention in the growth window of ferroelectric Hf0.5Zr0.5O2 thin films
Autores: Jike Lyu, Ignasi Fina, and Florencio Sánchez. 
Appl. Phys. Lett. 117, 072901 (2020)
DOI: 10.1063/5.0017738
The growth window of epitaxial Hf0.5Zr0.5O2 is established taking into account the main ferroelectric properties that films have to present simultaneously: high remanent polarization, low fatigue, and long retention.


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Visualization of moiré superlattices

Moiré superlattices in van der Waals heterostructures have given rise to a number of emergent electronic phenomena due to the interplay between atomic structure and electron correlations. Indeed, electrons in these structures have been recently found to exhibit a number of emergent properties that the individual layers themselves do not exhibit.


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Siesta: Recent developments and applications

A review of the present status, recent enhancements, and applicability of the Siesta program is presented. Since its debut in the mid-1990s, Siesta’s flexibility, efficiency, and free distribution have given advanced materials simulation capabilities to many groups worldwide.


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Flexible Antiferromagnetic FeRh Tapes as Memory Elements

Ignasi Fina*, Nico Dix, Enric Menéndez, Enric Menéndez, Anna Crespi, Michael Foerster, Lucia Aballe, Florencio Sánchez, Josep Fontcuberta*. ACS Appl. Mater. Interfaces 2020, XXXX, XXX, XXX-XXX. Publication Date:March 9, 2020

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