Direct Reversible Magnetoelectric Coupling in a Ferroelectric/Ferromagnetic Structure Controlled by Series Resistance Engineering

Sergio González-Casal, Ignasi Fina*, Florencio Sánchez, Josep Fontcuberta, ACS Appl. Electron. Mater. 2019191937-1944. Publication DateSeptember 2, 2019

https://doi.org/10.1021/acsaelm.9b00427

Achieving large magnetoelectric coupling is of interest for memory and communication applications. In multiferroic hybrid structures (combining ferroelectric and magnetic materials) in the presence of a magnetoelectric coupling, the ferroelectric properties can be modulated by a magnetic field. This is called the direct magnetoelectric effect. Measuring the ferroelectric properties in multiferroic materials most commonly requires using metallic electrodes that sandwich the ferroelectric material. In the present work, we use the series resistance introduced by the metallic electrode (La2/3Sr1/3MnO3) to manipulate one relevant ferroelectric parameter, i.e., the coercive voltage, of an adjacent ferroelectric layer (BaTiO3) by a magnetic field. We will show that the variations are fully reversible and more apparent at high frequencies; thus, of particular interest for applications, where high commutation rates are required.

Direct Reversible Magnetoelectric Coupling in a Ferroelectric/Ferromagnetic Structure Controlled by Series Resistance Engineering

Oxides for new-generation electronics

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