The research into insulating ferrimagnetic garnets has gained enormous momentum in the past decade. This is partly due to the improvement in the techniques to grow high-quality ultrathin films with desirable properties and the advances in understanding the spin transport within the ferrimagnetic garnets and through their interfaces with conducting materials. In recent years, we have seen remarkable progress in controlling the magnetization state of ferrimagnetic garnets by electrical means in suitable heterostructures and device architectures.
These advances have readily placed ferrimagnetic garnets in a favorable position for the future development of insulating spintronic concepts. The purpose of this article is to review recent experimental results of the current-induced magnetization control and associated phenomena in ferrimagnetic garnets, as well as to discuss future directions in this rapidly evolving area of spintronics.
Oxides for new-generation electronics
Current-Induced Magnetization Control in Insulating Ferrimagnetic Garnets
Can Onur Avci
Journal of the Physical Society of Japan, 90, 081007 (2021) 10.7566/JPSJ.90.081007